Currently, the new gallium arsenide nanowire lasers produce infrared light at a predefined wavelength and under pulsed excitation. "In the future we want to modify the emission wavelength and other laser parameters to better control temperature stability and light propagation under continuous excitation within the silicon chips," adds Finley.
Technical University of Munich
The team has just published its first successes in this direction. And they have set their sights firmly on their next goal: "We want to create an electric interface so that we can operate the nanowires under electrical injection instead of relying on external lasers," explains Koblmüller.
"The work is an important prerequisite for the development of high-performance optical components in future computers," sums up Finley. "We were able to demonstrate that manufacturing silicon chips with integrated nanowire lasers is possible."
Monolithically Integrated High-beta Nanowire Lasers on Silicon
B. Mayer, L. Janker, B. Loitsch, J. Treu, T. Kostenbader, S. Lichtmannecker, T. Reichert, S. Morkötter, M. Kaniber, G. Abstreiter, C. Gies, G. Koblmüller, and J. J. Finley;
Nano Letters, 2016, 16 (1), pp 152-156 - DOI: 10.1021/acs.nanolett.5b03404
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial Gain control
T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmüller, and J. J. Finley;
Applied Physics Letters, 108, 011108 (2016) - DOI: 10.1063/1.4939549
Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, Abstreiter, G. Koblmüller, and J. J. Finley; Applied Physics Letters 108, Vol. 8, to appear on Feb. 22nd (2016)