Hexagonal boron nitride enables the fabrication of 2-dimensional electronic memories

(a) Schematic of a Ti/thin h-BN/Cu RRAM device. (b) Typical I-V curves in a Ti/thin h-BN/Cu RRAM device showing bipolar RS. (c) Cumulative distribution of the resistance per cycle in HRS and LRS read at 0.1 V. (d) Cross-sectional TEM image showing defective paths (GBs) through the h-BN. (Wiley-VCH)

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